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USPTO Patent Grant: Light-Emitting Element with Long Lifetime

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Published March 24th, 2026
Detected March 24th, 2026
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Summary

The USPTO has granted a patent (US12588408B2) to Semiconductor Energy Laboratory Co., Ltd. for a novel light-emitting element. The patent describes an element with a long lifetime and high efficiency, utilizing specific organic acceptor and host materials in its electron-transport layers.

What changed

The United States Patent and Trademark Office (USPTO) has issued patent US12588408B2, titled "Novel light-emitting element with long lifetime and high efficiency," to Semiconductor Energy Laboratory Co., Ltd. The patent details a light-emitting element designed for extended operational life and improved energy efficiency. Key technical specifications include the composition of the EL layer, which comprises a hole-injection layer, multiple hole-transport layers, a light-emitting layer, and multiple electron-transport layers. The abstract specifies that the hole-injection layer includes an organic acceptor, and the LUMO levels of the host material and electron-transport layers are precisely defined relative to each other, with the host material featuring a condensed aromatic ring skeleton and the electron-transport layers containing a heteroaromatic ring skeleton.

This patent grant signifies the official recognition of an invention in the field of organic electronics. While not a regulatory rule imposing obligations on other entities, it establishes intellectual property rights for Semiconductor Energy Laboratory Co., Ltd. Companies operating in the organic light-emitting diode (OLED) or related display and lighting technology sectors, particularly those developing or manufacturing similar components, should be aware of this granted patent to ensure their products do not infringe on the patented technology. No immediate compliance actions are required for external entities, but legal and R&D departments should review the patent's claims for potential licensing or design-around considerations.

Source document (simplified)

← USPTO Patent Grants

Light-emitting element, light-emitting device, electronic device, and lighting device

Grant US12588408B2 Kind: B2 Mar 24, 2026

Assignee

Semiconductor Energy Laboratory Co., Ltd.

Inventors

Satoshi Seo, Tsunenori Suzuki, Yusuke Takita, Naoaki Hashimoto

Abstract

A novel light-emitting element is provided. A light-emitting element with a long lifetime is provided. A light-emitting element with high emission efficiency is provided. In the light-emitting element, an EL layer includes a hole-injection layer, a first hole-transport layer, a second hole-transport layer, a third hole-transport layer, a light-emitting layer, a first electron-transport layer, and a second electron-transport layer in this order; the hole-injection layer includes an organic acceptor; the LUMO level of the host material is higher than that of the first electron-transport layer; the LUMO level of the second electron-transport layer is higher than that of the first electron-transport layer; the host material is a substance including a condensed aromatic ring skeleton; and the first and second electron-transport layers each include a substance having a heteroaromatic ring skeleton.

CPC Classifications

H10K 85/615 C07D 209/82

Filing Date

2023-01-30

Application No.

18102914

Claims

12

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Named provisions

Abstract

Classification

Agency
USPTO
Published
March 24th, 2026
Instrument
Notice
Legal weight
Non-binding
Stage
Final
Change scope
Minor
Document ID
US12588408B2

Who this affects

Applies to
Manufacturers
Industry sector
3341 Computer & Electronics Manufacturing
Activity scope
Product Development Manufacturing
Geographic scope
United States US

Taxonomy

Primary area
Intellectual Property
Operational domain
R&D
Topics
Materials Science Electronics

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