USPTO Patent Grant: Magnetoresistive Device and Synapse Learning Module

ChangeBridge: Patent Grants - AI & Computing (G06N)

Published March 24th, 2026

Detected March 25th, 2026

Summary

The USPTO has granted a patent (US12588423B2) for a magnetoresistive device, a method for changing its resistance state, and a synapse learning module. The patent was assigned to the Institute of Microelectronics, Chinese Academy of Sciences, and filed on December 31, 2020.

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What changed

The United States Patent and Trademark Office (USPTO) has issued a patent grant, US12588423B2, for a novel magnetoresistive device, a method for altering its resistance state, and a synapse learning module. The invention, assigned to the Institute of Microelectronics, Chinese Academy of Sciences, features a specific arrangement of layers including a spin-orbit coupling layer with varying thickness regions and a ferromagnetic free layer with a corresponding pinning region. This design is intended for applications in memory technology and potentially artificial intelligence.

This patent grant represents a new intellectual property right for the assignee. For companies operating in the semiconductor, AI, or memory technology sectors, this patent may impact their freedom to operate or necessitate licensing agreements if their products or research infringe upon the granted claims. While this is a patent grant and not a regulatory rule, it establishes exclusive rights that compliance and legal teams should be aware of when assessing innovation landscapes and potential IP risks.

Source document (simplified)

← USPTO Patent Grants

Magnetoresistive device, method for changing resistance state thereof, and synapse learning module

Grant US12588423B2 Kind: B2 Mar 24, 2026

Assignee

INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventors

Guozhong Xing, Di Wang, Huai Lin, Long Liu, Yu Liu, Hangbing Lv, Changqing Xie, Ling Li, Ming Liu

Abstract

The present disclosure relates to a field of memory technical, and in particular to a magnetoresistive device, a method for changing a resistance state of the magnetoresistive device, and a synapse learning module. The magnetoresistive device includes a top electrode, a ferromagnetic reference layer, a tunneling layer, a ferromagnetic free layer, a spin-orbit coupling layer, and a bottom electrode that are arranged in sequence along a preset direction, where the spin-orbit coupling layer includes a first thickness region and a second thickness region distributed alternately, and a thickness of the first thickness region is different form a thickness of the second thickness region; and the ferromagnetic free layer includes a pinning region, and a position of the pinning region is in one-to-one correspondence with a position of the first thickness region.