USPTO Patent Grant: Hybrid Semiconductor-Superconductor Device

ChangeBridge: Patent Grants - AI & Computing (G06N)

Published March 17th, 2026

Detected March 23rd, 2026

Summary

The USPTO has granted patent US12581869B2 to Microsoft Technology Licensing, LLC for a hybrid semiconductor-superconductor device. The patent covers novel device structures and fabrication methods aimed at improving energy level hybridization and gate control in such hybrid systems.

View original document View source feed page

What changed

The United States Patent and Trademark Office (USPTO) has granted patent US12581869B2, titled 'Side-gated semiconductor-superconductor hybrid devices,' to Microsoft Technology Licensing, LLC. The patent, granted on March 17, 2026, details a hybrid device comprising a substrate, semiconductor components, and a superconductor component designed for energy level hybridization. Key innovations include arrangements for gate electrodes to control the semiconductor component and specific methods for fabricating these complex hybrid systems.

This patent grant signifies a new intellectual property asset for Microsoft in the advanced computing and semiconductor space. While patents do not impose direct regulatory obligations, they can influence industry standards, drive innovation, and potentially lead to licensing agreements or future regulatory considerations in areas like quantum computing or advanced electronics manufacturing. Companies operating in these sectors should be aware of this granted patent as it may impact their own research, development, and commercialization strategies.

Source document (simplified)

← USPTO Patent Grants

Side-gated semiconductor-superconductor hybrid devices

Grant US12581869B2 Kind: B2 Mar 17, 2026

Assignee

Microsoft Technology Licensing, LLC

Inventors

Marina Quintero Pérez, David Johannes Van Woerkom, Vinay Kumar Chinni, Amrita Singh

Abstract

One aspect provides semiconductor-superconductor hybrid device comprises a substrate, a first semiconductor component arranged on the substrate, a superconductor component arranged to be capable of energy level hybridisation with the first semiconductor component, and a second semiconductor component arranged as a gate electrode for gating the first semiconductor component. Another aspect provides a semiconductor-superconductor hybrid device, comprising: a substrate; a semiconductor component arranged on the substrate; a gate electrode for gating the semiconductor component; and a superconductor component capable of undergoing energy level hybridisation with the semiconductor component; wherein the gate electrode is arranged in a channel in the substrate. Also provided are methods of fabricating the semiconductor-superconductor hybrid devices.