← USPTO Patent Grants

Active material, anode layer, battery, and methods for producing these

Grant US12586782B2 Kind: B2 Mar 24, 2026

Assignee

TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventors

Mitsutoshi Otaki, Jun Yoshida, Masanori Harata, Yasuhiro Yamaguchi, Kota Urabe, Tatsuya Eguchi

Abstract

A main object of the present disclosure is to provide an active material wherein a volume variation due to charge/discharge is small. The present disclosure achieves the object by providing an active material comprising a silicon clathrate II type crystal phase, including a void inside a primary particle, and a void amount A of the void with a fine pore diameter of 100 nm or less is more than 0.15 cc/g and 0.40 cc/g or less.

CPC Classifications

C01B 33/021 C01P 2002/72 C01P 2002/74 C01P 2002/77 C01P 2006/14 C01P 2006/16 C01P 2006/40 H01M 4/0433 H01M 4/386 H01M 10/0525 H01M 2004/021 H01M 2004/027 Y02E 60/10

Filing Date

2022-09-07

Application No.

17939412

Claims

11