Magnetic memory in dual mode and AI memory thereof

Abstract

A magnetic memory operating in dual mode of the present disclosure includes a three-layer MTJ stack including a fixed layer with magnetization fixed by magnetic tunnel junction stack, a free layer with non-fixed magnetization, and a tunnel barrier layer disposed therebetween, wherein the magnetic memory operates in a volatile mode and a non-volatile mode by switching an energy barrier to one of a first state and a second state lower than the first state by an electric field applied to both ends of the MTJ stack.

CPC Classifications