SEMICONDUCTOR DEVICE, ELECTRONIC APPARATUS INCLUDING THE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

Abstract

Provided are a semiconductor device, an electronic apparatus including the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device includes a channel layer, a ferroelectric layer on the channel layer, and a gate electrode on the ferroelectric layer, wherein the ferroelectric layer includes an interface region, the interface region being a local region of the ferroelectric layer from an interface between the ferroelectric layer and the channel layer to a certain distance, the interface region includes a first material and a second material different from the first material, the first material includes at least one of Mo, TiN, W, or ITO, and the second material includes at least one of Al, Ti, or Ta.

CPC Classifications